| PART |
Description |
Maker |
| KO3416 |
VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| AN79L05 AN79L05M AN79LXXM AN79L04 AN79L05_M AN79L0 |
3-pin negative output voltage regulator (100 mA type)
3-pin negative output voltage regulator (100 mA type) 5 V FIXED NEGATIVE REGULATOR, PBCY3
3-pin negative output voltage regulator (100 mA type) 3针负输出电压调节器（100毫安型）
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
General-Purpose Linear IC - Voltage Regulater - 3-Pin Regulator
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| FDN5630 |
N-Channel Power Trench MOSFET
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| KDB3672 |
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| 2SK3402 |
Low on-resistance RDS(on)1 =15 m MAX. (VGS = 10 V, ID = 18A)
|
TY Semiconductor Co., Ltd
|
| 2SK3269 |
4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3430 |
Super low on-state resistance: RDS(on)1 = 7.3 m MAX. (VGS= 10 V, ID = 40 A)
|
TY Semiconductor Co., L...
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 |
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
8 Kbit Serial SPI EEPROM with Positive Clock Strobe
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
